Analysis of Line-Edge Roughness Using EUV Scatterometry

Abstract Smaller and more complex three-dimensional periodic nanostructures are part of the next generation integrated electronic circuits. Additionally, decreasing dimensions increases effect line-edge roughness on performance nanostructures. Efficient methods for characterizing required process control. Here, extreme-ultraviolet (EUV) scatterometry is exploited analysis from In line with previous observations, differences observed between edge width roughness. The angular distribution diffuse scattering an interplay shape, height structure, along line, correlation lines. Unfortunately, existing theoretical using do not cover all these aspects. Examples shown here demands future development approaches computing scattered X-rays discussed.